Electronic apparatus having a resin filled through electrode configured to go through first and second semiconductor components

ABSTRACT

A first semiconductor component and a second semiconductor component are attached together via an adhesion layer so that the first semiconductor component and the second semiconductor component are electrically connected with each other via a through electrode. The through electrode is formed to fill a through hole formed in the second semiconductor component and a through hole formed in a portion the adhesion layer. The through hole formed in the portion the adhesion layer is positioned between the through hole formed in the second semiconductor component and a second connection surface of a first semiconductor component through electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of the U.S. patentapplication Ser. No. 12/755,515 filed on Apr. 7, 2010, and is based uponand claims the benefit of priority of the prior Japanese PatentApplication No. 2009-096741 filed on Apr. 13, 2009, in the JapanesePatent Office, the entire contents of which are incorporated herein byreference.

FIELD

The embodiments discussed herein are related to an electronic apparatusand fabrication method of the same, specifically to an electronicapparatus provided with a first semiconductor component having a firstelectronic part and a first multilayer wiring structure electricallyconnected to the first electronic part, and a second semiconductorcomponent having a second electronic part and a second multilayer wiringstructure electrically connected to the second electronic part.

BACKGROUND

FIG. 1 is a cross-sectional-view of a related art electronic apparatus.

Referring to FIG. 1, a related art electronic apparatus 300 includes afirst semiconductor component 301, a second semiconductor component 302,and an inner connection terminal 303. The first semiconductor component301 includes a wiring substrate (first multilayer wiring structure) 311,a first electronic part 312, an underfill resin 313, and externalconnection terminals 314.

The wiring substrate 311 is a plate-like multilayer wiring structure,which includes insulation layers 316, 317, patterned wirings 319, 328,329, pads 321, solder resist layers 322, 326, and external connectionpads 323, 324. The insulation layer 316 is provided on an upper surface317A of the insulation layer 317.

The patterned wirings 319 and the pads 321 are provided on an uppersurface 316A of the insulation layer 316. The patterned wiring 319includes pad portions 332, 333 that are exposed through the solderresist layer 322. The pad 321 is exposed through the solder resist layer322.

The solder resist layers 322 are provided on the upper surface 316A ofthe insulation layer 316. The external connection pads 323, 324 areprovided on a lower surface 317B of the insulation layer 317. Lowersurfaces of the external connection pads 323, 324 are exposed throughthe solder resist layer 326.

The solder resist layer 326 is provided on the lower surface 317B of theinsulation layer 317. The patterned wirings 328, 329 are provided insidethe insulation layers 316, 317 that are stacked with each other. Thepatterned wirings 328 are connected to the pad portions 333 and theexternal connection pads 323. The patterned wirings 329 are connected tothe pads 321 and the external connection pads 324.

The first electronic part 312 is arranged between the firstsemiconductor component 301 and the second semiconductor component 302.The first electronic part 312 includes electrode pads 336, which areelectrically connected to the pad portions 332 via bumps (e.g., solderbumps) 337.

The underfill resin 313 is provided in order to fill a gap between thefirst electronic part 312 and the wiring substrate 311. The externalconnection terminals 314 are provided on a lower surface of the externalconnection pads 323, 324.

The second semiconductor component 302 is arranged above the firstsemiconductor component 301. The second semiconductor component 302includes a wiring substrate (second multilayer wiring structure) 341, asecond electronic part 343, and a mold resin 346. The wiring substrate341 has a plate shape, and includes pads 351, 352, 354. The pads 351oppose the pad portions 333 and are electrically connected to the padportions 333 via inner connection terminals 303. The pads 352 oppose thepads 321 and are electrically connected to the pads 321 via the innerconnection terminals 303. The pads 354 are electrically connected to thepads 351 or the pads 352.

The second electronic part 343 is affixed on the wiring substrate 341,and electrically connected to the pads 354 via metal wiring 344. Themold resin 346 is provided on the wiring substrate 341 and seals themetal wiring 344 and the second electronic part 343.

The inner connection terminals 303 have sufficient heights so that thefirst electronic part 312 and the second semiconductor component 302 arenot in contact with each other. The heights of the inner connectionterminals 303 are, for example, 200 μm (see Patent Document 1).

Patent Document 1: Japanese Patent Application Laid-Open PublicationH06-13541.

However, there is a problem in that a thickness of the related artelectronic apparatus 300 is inevitably increased because the firstelectronic part 312 arranged on the wiring substrate 311 is electricallyconnected to the wiring substrate 311 in the electronic device 300.

In addition, another cause of such a problem is that the heights (ordiameters) of the inner connection terminals 303 that connect the firstsemiconductor component 301 with the second semiconductor component 302need to be greater than a summation of the thickness of the firstelectronic part 312 and heights of the bumps 337 in the related artelectronic apparatus 300.

Moreover, there is a problem in that electrical connection between thefirst semiconductor component 301 and the second semiconductor component302 is not sufficiently reliable in some cases when the solder balls areused as the inner connection terminals 303.

Incidentally, the problem of an increased thickness of the electronicapparatus 300 may be raised when the first electronic part 313 and thewiring substrate 311 are electrically connected by wire-bonding.

SUMMARY

The present invention has been made in view of the above, and providesan electronic apparatus and a fabrication method of the same that arecapable of reducing a thickness of the electronic apparatus configuredwith a first semiconductor component and a second semiconductorcomponent that are stacked one on the other, and capable of improvingreliability of electrical connection between the first semiconductorcomponent and the second semiconductor component.

Accordingly, a first aspect of the present invention provides anelectronic apparatus comprising a first semiconductor component, asecond semiconductor component, an adhesion layer, and a third throughelectrode. The first semiconductor component includes a first electronicpart including a first electrode pad forming surface on which a firstelectrode pad is formed, and a first back surface opposing the firstelectrode pad forming surface, a first insulation member including onesurface and an opposing surface, the first insulation member sealing aside surface of the first electronic part so that the first electrodepad forming surface and the first back surface of the first electronicpart are exposed at the one surface and the opposing surface,respectively, of the first insulation member, a first multilayer wiringstructure including plural insulation layers that are stacked one aboveanother in order to cover the one surface of the first insulation memberand the first electrode pad forming surface, and a first patternedwiring, and a first through electrode configured to go through the firstinsulation member, wherein the first patterned wiring is connected tothe first electrode pad and the first through electrode. The secondsemiconductor component includes a second electronic part including asecond electrode pad forming surface on which a second electrode pad isformed, and a second back surface opposing the second electrode padforming surface, a second insulation member including one surface and anopposing surface, the second insulation member sealing a side surface ofthe second electronic part so that the second electrode pad formingsurface and the second back surface of the second electronic part areexposed at the one surface and the opposing surface, respectively, ofthe second insulation member, a second multilayer wiring structureincluding plural insulation layers that are stacked one above another inorder to cover the one surface of the second insulation member and thesecond electrode pad forming surface, and a second patterned wiring, anda second through electrode that is provided on an inner surface of afirst through hole formed to go through the second insulation member andthe second multilayer wiring structure, and includes a second throughhole formed in a center portion of the second through electrode, whereinthe second patterned wiring is connected to the second electrode pad andthe second through electrode. The adhesion layer is provided between theopposing surface of the first insulation member and the secondmultilayer wiring structure, thereby stacking the first semiconductorcomponent and the second semiconductor component one above the other.The third through electrode is configured to fill the second throughhole and a third through hole that is formed integrally with the secondthrough hole in the adhesion layer, thereby connecting the first throughelectrode and the second through electrode.

A second aspect of the present invention provides an electronicapparatus comprising a first semiconductor component, a secondsemiconductor component, an adhesion layer, and a through electrode. Thefirst semiconductor component includes a first electronic part includinga first electrode pad forming surface on which a first electrode pad isformed, and a first back surface opposing the first electrode padforming surface, a first insulation member including one surface and anopposing surface, the first insulation member sealing a side surface ofthe first electronic part so that the first electrode pad formingsurface and the first back surface of the first electronic part areexposed at the one surface and the opposing surface, respectively, ofthe first insulation member, and a first multilayer wiring structureincluding plural insulation layers that are stacked one above another inorder to cover the one surface of the first insulation member and thefirst electrode pad forming surface, and a first patterned wiring,wherein the first patterned wiring is connected to the first electrodepad. The second semiconductor component includes a second electronicpart including a second electrode pad forming surface on which a secondelectrode pad is formed, and a second back surface opposing the secondelectrode pad forming surface, a second insulation member including onesurface and an opposing surface, the second insulation member sealing aside surface of the second electronic part so that the second electrodepad forming surface and the second back surface of the second electronicpart are exposed at the one surface and the opposing surface,respectively, of the second insulation member, and a second multilayerwiring structure including plural insulation layers that are stacked oneabove another in order to cover the one surface of the second insulationmember and the second electrode pad forming surface, and a secondpatterned wiring, wherein the second patterned wiring is connected tothe second electrode pad. The adhesion layer is provided between theopposing surface of the first insulation member and the secondmultilayer wiring structure, thereby stacking the first semiconductorcomponent and the second semiconductor component one above the other.The through electrode is configured to go through the first multilayerwiring structure, the first insulation member, the adhesion layer, thesecond multilayer wiring structure, and the second insulation member,thereby connecting the first patterned wiring and the second patternedwiring.

A third aspect of the present invention provides a method of fabricatingan electronic apparatus. The method comprises steps of fabricating afirst semiconductor component, fabricating a second semiconductorcomponent, applying an adhesion layer, forming a third through hole, andforming a third through electrode. In the first semiconductor componentforming step, there is fabricated a first semiconductor component, afirst electronic part includes a first electrode pad forming surface onwhich a first electrode pad is formed, and a first back surface opposingthe first electrode pad forming surface, a first insulation memberincluding one surface and an opposing surface, the first insulationmember sealing a side surface of the first electronic part so that thefirst electrode pad forming surface and the first back surface of thefirst electronic part are exposed at the one surface and the opposingsurface, respectively, of the first insulation member, a firstmultilayer wiring structure including plural insulation layers that arestacked one above another in order to cover the one surface of the firstinsulation member and the first electrode pad forming surface, and afirst patterned wiring, and a first through electrode configured to gothrough the first insulation member, wherein the first patterned wiringis connected to the first electrode pad and the first through electrode.In the second semiconductor component forming step, there is fabricateda second semiconductor component including a second electronic partincluding a second electrode pad forming surface on which a secondelectrode pad is formed, and a second back surface opposing the secondelectrode pad forming surface, a second insulation member including onesurface and an opposing surface, the second insulation member sealing aside surface of the second electronic part so that the second electrodepad forming surface and the second back surface of the second electronicpart are exposed at the one surface and the opposing surface,respectively, of the second insulation member, and a second multilayerwiring structure including plural insulation layers that are stacked oneabove another in order to cover the one surface of the second insulationmember and the second electrode pad forming surface, and a secondpatterned wiring, wherein the second patterned wiring is connected tothe second electrode pad. In the semiconductor component attaching step,an adhesion layer is applied between the opposing surface of the firstinsulation member and the second multilayer wiring structure, therebystacking the first semiconductor component and the second semiconductorcomponent one above the other. In the third through hole forming step,there is formed a third through hole that goes through the adhesionlayer and is formed integrally with the second through hole. In thethird through electrode forming step, there is formed a third throughelectrode to be connected to the first through electrode and the secondthrough electrode, in the second through hole and the third throughhole.

A fourth aspect of the present invention provides a method offabricating an electronic apparatus. This method comprises steps offabricating a first semiconductor component, fabricating a secondsemiconductor component, applying an adhesion layer, forming a throughhole, and forming a through electrode. In the first semiconductorcomponent forming step, there is fabricated a first semiconductorcomponent including a first electronic part including a first electrodepad forming surface on which a first electrode pad is formed, and afirst back surface opposing the first electrode pad forming surface, afirst insulation member including one surface and an opposing surface,the first insulation member sealing a side surface of the firstelectronic part so that the first electrode pad forming surface and thefirst back surface of the first electronic part are exposed at the onesurface and the opposing surface, respectively, of the first insulationmember, and a first multilayer wiring structure including pluralinsulation layers that are stacked one above another in order to coverthe one surface of the first insulation member and the first electrodepad forming surface, and a first patterned wiring, wherein the firstpatterned wiring is connected to the first electrode pad. In the secondsemiconductor component forming step, there is fabricated a secondsemiconductor component including a second electronic part including asecond electrode pad forming surface on which a second electrode pad isformed, and a second back surface opposing the second electrode padforming surface, a second insulation member including one surface and anopposing surface, the second insulation member sealing a side surface ofthe second electronic part so that the second electrode pad formingsurface and the second back surface of the second electronic part areexposed at the one surface and the opposing surface, respectively, ofthe second insulation member, and a second multilayer wiring structureincluding plural insulation layers that are stacked one above another inorder to cover the one surface of the second insulation member and thesecond electrode pad forming surface, and a second patterned wiring,wherein the second patterned wiring is connected to the second electrodepad. In the semiconductor component attaching step, an adhesion layer isapplied between the opposing surface of the first insulation member andthe second multilayer wiring structure, thereby stacking the firstsemiconductor component and the second semiconductor component one abovethe other. In the through hole forming step, there is formed a throughhole that goes through the first multilayer wiring structure, the firstinsulation member, the adhesion layer, the second multilayer wiringstructure, the second insulation member, the first patterned wiring, andthe second patterned wiring; and a through electrode forming step offorming a through electrode to be connected to the first patternedwiring and the second patterned wiring, in the through hole.

According to an embodiment of the present invention, there are providedan electronic apparatus and a fabrication method of the same that arecapable of reducing a thickness of the electronic apparatus configuredwith a first semiconductor component and a second semiconductorcomponent that are stacked one on the other, and improving reliabilityof electrical connection between the first semiconductor component andthe second semiconductor component.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a related art electronic apparatus;

FIG. 2 is a cross-sectional view of an electronic apparatus according toa first embodiment of the present invention;

FIG. 3 is an explanatory view (part 1) for explaining a method offabricating an electronic apparatus according to the first embodiment ofthe present invention;

FIG. 4 is an explanatory view (part 2) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 5 is an explanatory view (part 3) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 6 is an explanatory view (part 4) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 7 is an explanatory view (part 5) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 8 is an explanatory view (part 6) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 9 is an explanatory view (part 7) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 10 is an explanatory view (part 8) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 11 is an explanatory view (part 9) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 12 is an explanatory view (part 10) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 13 is an explanatory view (part 11) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 14 is an explanatory view (part 12) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 15 is an explanatory view (part 13) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 16 is an explanatory view (part 14) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 17 is an explanatory view (part 15) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 18 is an explanatory view (part 16) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 19 is an explanatory view (part 17) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 20 is an explanatory view (part 18) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 21 is an explanatory view (part 19) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 22 is an explanatory view (part 20) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 23 is an explanatory view (part 21) for explaining the method offabricating the electronic apparatus according to the first embodimentof the present invention;

FIG. 24 is a cross-sectional view of an electronic apparatus accordingto a second embodiment of the present invention;

FIG. 25 is an explanatory view (part 1) for explaining a method offabricating an electronic apparatus according to a second embodiment ofthe present invention;

FIG. 26 is an explanatory view (part 2) for explaining the method offabricating the electronic apparatus according to the second embodimentof the present invention;

FIG. 27 is an explanatory view (part 3) for explaining the method offabricating an electronic apparatus according to the second embodimentof the present invention; and

FIG. 28 is an explanatory view (part 4) for explaining the method offabricating the electronic apparatus according to the second embodimentof the present invention.

DESCRIPTION OF EMBODIMENTS (First Embodiment)

FIG. 2 is a cross-sectional view of an electronic apparatus according toa first embodiment of the present invention.

As shown, an electronic apparatus 10 according to the first embodimentincludes a first semiconductor component 11, a second semiconductorcomponent 12, an adhesion layer 13, through holes (third through holes)15 through 17, through electrodes (third through electrodes) 21 through23, and a solder resist layer 24.

The first semiconductor component 11 includes first electronic parts 26,27, an insulation member 29, through electrodes (first throughelectrodes) 31 through 33, and a multilayer wiring structure (firstmultilayer wiring structure) 35.

The first electronic part 26 is a thin-plate electronic part, andincludes first electrode pads 37, 38 having connection surfaces 37A,38A, a first electrode pad forming surface 26A on which the firstelectrode pads 37, 38 are formed, and a back surface (first backsurface) 26B opposing the first electrode pad forming surface 26A.

The first electrode pads 37, 38 and the first electrode pad formingsurface 26A are exposed through a multilayer wiring structure formingsurface (first multilayer wiring structure forming surface) 29A of theinsulation member 29 that seals the first electronic parts 26, 27.Specifically, the first electrode pads 37, 38 are protruded from themultilayer wiring structure forming surface 29A. The back surface 26B ofthe first electronic part 26 is exposed through a plane 29B, which is anopposing surface with respect to the multilayer wiring structure formingsurface 29A, of the insulation member 29. A thickness of the firstelectronic part 26 may be about 200 μm.

The first electronic part 27 is a thin-plate electronic part, andincludes first electrode pads 39, 40 having connection surfaces 39A,40A, a first electrode pad forming surface 27A on which the firstelectrode pads 39, 40 are formed, and a back surface (first backsurface) 27B opposing the first electrode pad forming surface 27A.

The first electrode pads 39, 40 and the first electrode pad formingsurface 27A are exposed through the multilayer wiring structure formingsurface 29A of the insulation member 29 that seals the first electronicparts 26, 27. Specifically, the first electrode pads 39, 40 areprotruded from the multilayer wiring structure forming surface 29A. Theback surface 27B of the first electronic part 27 is exposed through theplane 29B of the insulation member 29. A thickness of the firstelectronic part 27 is substantially the same as that of the firstelectronic part 26, and may be, for example, about 200 μm.

Semiconductor chips may be used as the first electronic parts 26, 27.Specifically, both of the first electronic parts 26, 27 may besemiconductor chips such as Central Processing Units (CPUs); one of thefirst electronic parts 26, 27 may be a semiconductor chip such as a CPU,while the other one of the first electronic parts 26, 27 may be asemiconductor chip such as a memory; or one of the first electronicparts 26, 27 may be a semiconductor chip such as a CPU, while the otherone of the first electronic parts 26, 27 may be a semiconductor chipsuch as a Graphics Processing Unit (GPU).

The insulation member 29 is arranged around the first electronic parts26, 27 in order to seal side surfaces of the first electronic parts 26,27. The insulation member 29 has substantially the same thickness as thethicknesses of the first electronic parts 26, 27 and may be about 200μm.

The insulation member 29 includes the multilayer wiring structureforming surface 29A, the plane 29B opposing the multilayer wiringstructure forming surface 29A, and through holes 43 through 45. Themultilayer wiring structure forming surface 29A and the first electrodepad forming surfaces 26A, 27A form substantially the same plane. Themultilayer wiring structure 35 is formed on the multilayer wiringstructure forming surface 29A.

The plane 29B of the insulation member 29, the back surface 26B of thefirst electronic part 26, and the back surface 27B of the firstelectronic part 27 form substantially the same plane. The through holes43 through 45 are formed to go through the insulation member 29 in areasaround the first electronic parts 26, 27. Diameters of the through holes43 through 45 may be about 200 μm.

A mold resin, for example, an epoxy resin may be used as the insulationmember 29 having the above configuration.

The through electrode 31 is formed in the through hole 43. A depth ofthe through hole 31 is greater than the thickness of the insulationmember 29. The through electrode 31 includes a first connection surface31A on the side of the multilayer wiring structure forming surface 29A,and a second connection surface 31B on the side of the plane 29B of theinsulation member 29. The first connection surface 31A is exposedthrough and protruded from the multilayer wiring structure formingsurface 29A. The first connection surface 31A forms substantially thesame plane as the connection surfaces 37A, 38A, 39A, 40A of thecorresponding electrode pads 37, 38, 39, 40. The second connectionsurface 31B is exposed through the plane 29B of the insulation member29, and forms substantially the same plane as the plane 29B of theinsulation member 29.

The through electrode 32 is formed in the through hole 44. A depth ofthe through electrode 32 is greater than the thickness of the insulationmember 29. The through electrode 32 includes a first connection surface32A on the side of the multilayer wiring structure forming surface 29A,and a second connection surface 32B on the side of the plane 29B of theinsulation member 29. The first connection surface 32A is exposedthrough and protruded from the multilayer wiring structure formingsurface 29A. The first connection surface 32A forms substantially thesame plane as the connection surfaces 37A, 38A, 39A, 40A of thecorresponding electrode pads 37, 38, 39, 40. The second connectionsurface 32B is exposed through the plane 29B of the insulation member29, and forms substantially the same plane as the plane 29B of theinsulation member 29.

The through electrode 33 is formed in the through hole 45. A depth ofthe through electrode 33 is greater than the thickness of the insulationmember 29. The through electrode 33 includes a first connection surface33A on the side of the multilayer wiring structure forming surface 29A,and a second connection surface 33B on the side of the plane 29B of theinsulation member 29. The first connection surface 33A is exposedthrough and protruded from the multilayer wiring structure formingsurface 29A. The first connection surface 33A forms substantially thesame plane as the connection surfaces 37A, 38A, 39A, 40A of thecorresponding electrode pads 37, 38, 39, 40. The second connectionsurface 33B is exposed through the plane 29B of the insulation member29, and forms substantially the same plane as the plane 29B of theinsulation member 29.

The through electrodes 31 through 33 may be made of, for example,copper.

As stated above, because the back surfaces 26B, 27B of the correspondingfirst electronic parts 26, 27, the plane 29B of the insulation member29, and the connection surfaces of 31B, 32B, 33B of the correspondingthrough electrodes 31 through 33 are configured to form the same plane,a gap between the first semiconductor component 11 and the secondsemiconductor component 12 mounted above the first semiconductorcomponent 11 can be reduced, thereby reducing a thickness of theelectronic apparatus 10.

The multilayer wiring structure 35 includes a stacked body (firststacked body) 49, external connection pads 51 through 54, patternedwirings 56 through 59, and a solder resist layer 60.

The stacked body 49 includes plural insulation layers 61, 62 that arestacked one on the other. The insulation layer 61 is provided in orderto cover the multilayer wiring structure forming surface 29A, the firstelectrode pad forming surfaces 26A, 27A, the first electrode pads 37through 40, and protruding portions of the through electrodes 31 through33. The insulation layer 61 may be made of an insulation resin (e.g., anepoxy resin). A thickness of the first insulation layer 61 may be about5 through 30 μm.

The insulation layer 62 is formed on a surface 61A of the insulationlayer 61. The insulation layer 62 may be made of an insulation resin(e.g., an epoxy resin). A thickness of the insulation layer 62 may beabout 5 through 30 μm.

The external connection pads 51, 52, 53, 54 are provided on a plane 62Aof the insulation layer 62. The external connection pad 51 includes aconnection surface 51A on which an external connection terminal (notshown) is arranged. The external connection pad 51 is connected to thepatterned wiring 56 and further to the first electronic parts 26, 27 viathe patterned wiring 56.

The external connection pad 52 includes a connection surface 52A onwhich an external connection terminal (not shown) is arranged. Theexternal connection pad 52 is connected to the patterned wiring 57 andfurther to the first electronic part 26 and the second semiconductorcomponent 12 via the patterned wiring 57.

The external connection pad 53 includes a connection surface 53A onwhich an external connection terminal (not shown) is arranged. Theexternal connection pad 53 is connected to the patterned wiring 58 andfurther to the first electronic part 27 and the second semiconductorcomponent 12 via the patterned wiring 58.

The external connection pad 54 includes a connection surface 54A onwhich an external connection terminal (not shown) is arranged. Theexternal connection pad 54 is connected to the patterned wiring 59 andfurther to the second semiconductor component 12 via the patternedwiring 59.

The external connection pads 51, 52, 53, 54 may be made of, for example,copper.

The patterned wirings 56 through 59 are arranged inside and go throughthe stacked body 49. The patterned wiring 56 includes vias 65, 66, 68and a wiring 67. The via 65 is provided to go through a portion of theinsulation layer 61, the portion opposing the first electrode pad 37.One end portion of the via 65 is directly connected to the firstelectrode pad 37, which allows the via 65 to be electrically connectedto the first electronic part 26.

The via 66 is provided to go through a portion of the insulation layer61, the portion opposing the first electrode pad 39. One end portion ofthe via 66 is directly connected to the first electrode pad 39, whichallows the via 66 to be electrically connected to the first electronicpart 26.

The wiring 67 is provided on the plane 61A of the insulation layer 61.The wiring 67 is formed integrally with the other end portions of thevias 65, 66, which allows the wiring 67 to be electrically connected tothe first electronic parts 26, 27.

The via 68 is provided to go through a portion of the insulation layer62, the portion being positioned between the wiring 67 and the externalconnection pad 51. One end portion of the via 68 is connected to thewiring 67, and the other end portion of the via 68 is connected to theexternal connection pad 51, which allows the via 68 to be electricallyconnected to the wiring 67 and the external connection pad 51.

The patterned wiring 56 having the above configuration electricallyconnects the first electronic parts 26, 27 and the external connectionpad 51. The patterned wiring 56 may be made of, for example, copper.

The patterned wiring 57 includes vias 71, 72, 74 and a wiring 73. Thevia 71 is provided to go through a portion of the insulation layer 61,the portion opposing the first electrode pad 38. One end portion of thevia 71 is directly connected to the first electrode pad 38, which allowsthe first electronic part 26 to be electrically connected to the firstelectronic part 26.

The via 72 is provided to go through a portion of the insulation layer61, the portion being positioned below the through electrode 31. One endportion of the via 72 is directly connected to the first connectionsurface 31A of the through electrode 31, which allows the via 72 to beelectrically connected to the through electrode 31.

The wiring 73 is provided on the plane 61A of the insulation layer 61.The wiring 73 is formed integrally with one end portion of each of thevias 71, 72, which allows the wiring 73 to be electrically connected tothe first electronic part 26 and the second semiconductor component 12by way of the vias 71, 72.

The via 74 is provided to go through a portion of the insulation layer62, the portion being positioned between the wiring 73 and the externalconnection pad 52. One end portion of the via 74 is connected to thewiring 73, and the other end portion of the via 74 is formed integrallywith the external connection pad 52, which allows the via 74 to beelectrically connected to the external connection pad 52.

The patterned wiring 57 having the above configuration electricallyconnects the first electronic part 26, the through electrode 31, and theexternal connection pad 52. The patterned wiring 57 may be made of, forexample, copper.

The patterned wiring 58 includes vias 76, 77, 79 and a wiring 78. Thevia 76 is provided to go through a portion of the insulation layer 61,the portion opposing the first electrode pad 40. One end portion of thevia 76 is directly connected to the first electrode pad 40, which allowsthe via 75 to be electrically connected to the first electronic part 27.

The via 77 is provided to go through a portion of the insulation layer61, the portion being positioned below the through electrode 32. Anupper end portion of the via 77 is directly connected to the firstconnection surface 32A of the through electrode 32, which allows the via77 to be electrically connected to the through electrode 32.

The wiring 78 is provided on the plane 61A of the insulation layer 61.The wiring 78 is formed integrally with one end portion of each of thevias 76, 77, which allows the wiring to be electrically connected to thefirst electronic part 26 and the second semiconductor component 12 byway of the vias 76, 77.

The via 79 is provided to go through a portion of the insulation layer62, the portion being positioned between the wiring 78 and the externalconnection pad 53. One end portion of the via 79 is connected to thewiring 78, and the other end portion of the via 79 is connected to theexternal connection pad 53, which allows the via 79 to be electricallyconnected to the wiring 78 and the external connection pad 53.

The patterned wiring 58 having the above configuration electricallyconnects the first electronic part 27, the through electrode 32, and theexternal connection pad 53. The patterned wiring 58 may be made of, forexample, copper.

The patterned wiring 59 includes a via 81, a via 83, and a wiring 82.The via 81 is provided to go through a portion of the insulation layer61, the portion opposing the through electrode 33. One end portion ofthe via 81 is directly connected to the first connection surface 33A ofthe through electrode 33, which allows the via 81 to be electricallyconnected to the through electrode 33.

The wiring 82 is provided on the plane 61A of the insulation layer 61.The wiring 82 is formed integrally with the other end portion of the via81, which allows the wiring 82 to be electrically connected to thethrough electrode 33 by way of the via 81.

The via 83 is provided to go through a portion of the insulation layer62, the portion being positioned between the wiring 82 and the externalconnection pad 54. One end portion of the via 83 is connected to thewiring 82, and the other end portion of the via 83 is connected to theexternal connection pad 54, which allows the via 83 to be electricallyconnected to the wiring 82 and the external connection pad 54.

The patterned wiring 59 having the above configuration electricallyconnects the through electrode 33 and the external connection pad 54.The patterned wiring 59 may be made of, for example, copper.

As stated above, the patterned wiring 57 of the multilayer wiringstructure 35 and the first electrode pad 38 of the first electronic part26 are directly connected with each other; the patterned wiring 56 ofthe first electronic part 26, the first electrode pad 37 of the firstelectronic part 26, and the first electrode pad 39 of the firstelectronic part 27 are directly connected with one another; and thepatterned wiring 58 of the multilayer wiring structure 35 and the firstelectrode pad 40 are directly connected with each other. Therefore, athickness of the first semiconductor component 11 can be reduced whenbeing compared with the related art semiconductor component 301 wherethe first electronic part 312 and the patterned wiring 319 areelectrically connected with each other via the bumps 337 or metalwirings.

The solder resist layer 60 is provided on the plane 62A of theinsulation layer 62. The solder resist layer 60 includes openings 86,87, 88, 89 that allow the corresponding connection surfaces 51A, 52A,53A, 54A to be exposed.

A thickness of the multilayer wiring structure having the aboveconfiguration is less than the thicknesses of the first electronic parts26, 27 and the insulation member 29 that are shown in FIG. 2. Thethickness of the multilayer wiring structure 35 may be about 20 throughabout 80 μm. The multilayer wiring structure 35 is configured as afilm-like body or a layered body.

The second semiconductor component 12 includes second electronic parts95, 96, an insulation member (second insulation member) 98, a multilayerwiring structure (second multilayer wiring structure) 99, through holes(first through holes) 101 through 103, and through electrodes (secondelectrodes) 106 through 108.

The second electronic part 95 is a thin-plate electronic part, andincludes second electrode pads 114, 115 having connection surfaces 114A,115A, a second electrode pad forming surface 95A on which the secondelectrode pads 114, 115 are formed, and a back surface (second backsurface) 95B opposing the second electrode pad forming surface 26A.

The second electrode pads 114, 115 and the second electrode pad formingsurface 95A are exposed through a multilayer wiring structure formingsurface (second multilayer wiring structure forming surface) 98A of aninsulation member 98 that seals the second electronic parts 95, 96.Specifically, the second electrode pads 114, 115 are protruded from themultilayer wiring structure forming surface 98A. The back surface 95B ofthe second electronic part 95 is exposed through a plane 98B, which isan opposing surface with respect to the multilayer wiring structureforming surface 98A, of the insulation member 98. A thickness of thefirst electronic part 95 may be about 200 μm.

The second electronic part 96 is a thin-plate electronic part, andincludes second electrode pads 116, 117 having connection surfaces 116A,117A, a second electrode pad forming surface 96A on which the secondelectrode pads 116, 117 are formed, and a back surface (second backsurface) 96B opposing the second electrode pad forming surface 96A.

The second electrode pads 116, 117 and the second electrode pad formingsurface 96A are exposed through the multilayer wiring structure formingsurface 98A of the insulation member 98 that seals the second electronicparts 95, 96. Specifically, the second electrode pads 116, 117 areprotruded from the multilayer wiring structure forming surface 98A. Theback surface 96B of the second electronic part 96 is exposed through theplane 98B of the insulation member 98. A thickness of the secondelectronic part 96 is substantially the same as that of the secondelectronic part 95, and may be about 200 μm.

Semiconductor chips may be used as the second electronic parts 95, 96.Specifically, both of the second electronic parts 95, 96 may besemiconductor chips such as Central Processing Units (CPUs); one of thesecond electronic parts 95, 96 may be a semiconductor chip such as aCPU, while the other one of the second electronic parts 95, 96 may be asemiconductor chip such as a memory; or one of the second electronicparts 95, 96 may be a semiconductor chip such as a CPU, while the otherone of the second electronic parts 95, 96 may be a semiconductor chipsuch as a Graphics Processing Unit (GPU).

The insulation member 98 is arranged around the second electronic parts95, 96 in order to seal side surfaces of the second electronic parts 95,96. The insulation member 98 has substantially the same thickness aseach of the second electronic parts 95, 96 and may be about 200 μm.

The insulation member 98 includes the multilayer wiring structureforming surface 98A, and the plane 98B opposing the multilayer wiringstructure forming surface 98A. The multilayer wiring structure formingsurface 98A and the second electrode pad forming surfaces 95A, 96A formsubstantially the same plane. The multilayer wiring structure 99 isformed on the multilayer wiring structure forming surface 98A.

The plane 98B of the insulation member 98 forms substantially the sameplane along with the back surfaces 95B, 96B of the second electronicparts 95, 96.

A mold resin, for example, an epoxy resin may be used as the insulationmember 29 having the above configuration.

The multilayer wiring structure 99 includes a stacked body (secondstacked body) 121 and patterned wirings 123 through 125. The stackedbody 121 includes plural insulation layers 61, 62 that are stacked oneon the other. The stacked body 121 has substantially the sameconfiguration as the stacked body 49 previously explained, except thatthe insulation layer 61 is provided to cover the multilayer wiringstructure forming surface 98A, the second electrode pad forming surfaces95A, 96A, and the second electrode pads 114 through 117.

The patterned wirings 123 through 125 are arranged inside and go throughthe stacked body 121. The patterned wiring 123 includes vias 127, 128and a wiring 129. The via 127 is provided to go through a portion of theinsulation layer 61, the portion opposing the second electrode pad 114.One end portion of the via 127 is directly connected to the secondelectrode pad 114, which allows the via 127 to be electrically connectedto the second electronic part 95.

The via 128 is provided to go through a portion of the insulation layer61, the portion opposing the second electrode pad 116. One end portionof the via 128 is directly connected to the second electrode pad 116,which allows the via 128 to be electrically connected to the secondelectronic part 96.

The wiring 129 is provided on the plane 61A of the insulation layer 61.The wiring 129 is formed integrally with the other end portions of thevias 127, 128, which allows the wiring 129 to be electrically connectedto the second electronic parts 95, 96 by way of the vias 127, 128.

The wiring 131 is provided on the plane 62A of the insulation layer 61.The wiring 131 is electrically connected to the wiring 129 via a via(not shown) that goes through the insulation layer 62.

The patterned wiring 123 having the above configuration is electricallyconnected to the second electronic parts 95, 96. The patterned wiring123 may be made of, for example, copper.

The patterned wiring 124 includes vias 133, 135 and wirings 134, 136.The via 133 is provided to go through a portion of the insulation layer61, the portion opposing the second electrode pad 115. One end portionof the via 133 is directly connected to the second electrode pad 115,which allows the via 133 to be electrically connected to the secondelectronic part 95.

The wiring 134 is provided on the plane 61A of the insulation layer 61.The wiring 134 is formed integrally with the other end portion of thevia 133, which allows the wiring 134 to be electrically connected to thesecond electronic part 95 by way of the via 133.

The via 135 is provided to go through a portion of the insulation layer62, the portion being positioned between the wiring 134 and the wiring136. One end portion of the via 135 is connected to the wiring 134, andthe other end portion of the via 135 is formed integrally with thewiring 136. With this, the via 135 electrically connects the wiring 134and the wiring 135.

The wiring 136 is provided on the plane 62A of the insulation layer 62.The wiring 136 is formed integrally with the other end portion of thevia 135, which allows the wiring 136 to be electrically connected to thewiring 134 by way of the via 135.

The patterned wiring 124 having the above configuration is electricallyconnected to the second electronic part 95. The patterned wiring 124 maybe made of, for example, copper.

The patterned wiring 125 includes vias 141, 143 and wirings 142, 145.The via 141 is provided to go through a portion of the insulation layer61, the portion opposing the second electrode pad 117. One end portionof the via 141 is directly connected to the second electrode pad 117,which allows the via 141 to be electrically connected to the secondelectronic part 95.

The wiring 142 is provided on the plane 61A of the insulation layer 61.The wiring 142 is formed integrally with the other end portion of thevia 141, which allows the wiring 142 to be electrically connected to thesecond electronic part 96 by way of the via 141.

The via 143 is provided to go through a portion of the insulation layer62, the portion being positioned between the wiring 142 and the wiring145. One end portion of the via 143 is connected to the wiring 142, andthe other end portion of the via 143 is formed integrally with thewiring 145. With this, the via 143 electrically connects the wiring 142and the wiring 145.

The wiring 145 is provided on the plane 62A of the insulation layer 62.The wiring 145 is formed integrally with the via 143, which allows thewiring 145 to be electrically connected to the wiring 142 by way of thevia 143.

The patterned wiring 125 having the above configuration is electricallyconnected to the second electronic part 96. The patterned wiring 125 maybe made of, for example, copper.

As stated above, the second patterned wiring 123 of the multilayerwiring structure 99 and the second electrode pad 116 of the secondelectronic part 96 are directly connected to each other; the secondpatterned wiring 125 of the multilayer wiring structure 99 and thesecond electrode pad 117 of the second electronic part 96 are directlyconnected to each other; and the second patterned wiring 124 of themultilayer wiring structure and the second electrode pad 115 of thesecond electronic part 95 are directly connected to each other.Therefore, a thickness of the second semiconductor component 12 can bereduced when being compared with a case where the second electronicparts 95, 96 are electrically connected to the corresponding patternedwirings 123 through 125 via the bumps or metal wirings.

The through hole 101 is formed to go through the insulation member 98,the stacked body 121, and the wiring 131. The through hole 101 allows aninner surface of the wiring 131 to be exposed. The through hole 101 isformed so that the second connection surface 33B of the throughelectrode 33 provided in the first semiconductor component 11 is exposedwhen the second semiconductor component 12 is arranged above the firstsemiconductor component 11.

The through hole 102 is formed to go through the insulation member 98,the stacked body 121, and the wiring 136. The through hole 102 allows aninner surface of the wiring 136 to be exposed. The through hole 102 isformed so that the second connection surface 31B of the throughelectrode 31 provided in the first semiconductor component 11 is exposedwhen the second semiconductor component 12 is arranged above the firstsemiconductor component 11.

The through hole 103 is formed to go through the insulation member 98,the stacked body 121, and the wiring 145. The through hole 103 allows aninner surface of the wiring 145 to be exposed. The through hole 103 isformed so that the second connection surface 32B of the throughelectrode 32 provided in the first semiconductor component 11 is exposedwhen the second semiconductor component 12 is arranged above the firstsemiconductor component 11. Diameters of the through holes 101 through103 may be about 100 μm.

The through electrode 106 is provided on a part of the plane 98B of theinsulation member 98, an inner surface of the through hole 101, asidesurface and a lower surface of the wiring 131. With this, the throughelectrode 106 is electrically connected to the patterned wiring 123 andto the second electronic parts 95, 96 via the patterned wiring 123. Thethrough electrode 106 has in the center a through hole (second throughhole) 146 having a smaller diameter than that of the through hole 101. Adiameter of the through hole 146 may be, for example, about 80 μm. Thethrough electrode 106 may be made of, for example, copper.

The through electrode 107 is provided on a part of the plane 98B of theinsulation member 98, an inner surface of the through hole 102, asidesurface and a lower surface of the wiring 136. With this, the throughelectrode 107 is electrically connected to the patterned wiring 124 andto the second electronic part 95 via the patterned wiring 124. Thethrough electrode 107 has in the center a through hole (second throughhole) 147 having a smaller diameter than that of the through hole 102. Adiameter of the through hole 147 may be, for example, about 80 μm. Thethrough electrode 107 may be made of, for example, copper.

The through electrode 108 is provided on a part of the plane 98B of theinsulation member 98, an inner surface of the through hole 103, a sidesurface and a lower surface of the wiring 145. With this, the throughelectrode 108 is electrically connected to the patterned wiring 125 andto the second electronic part 96 via the patterned wiring 125. Thethrough electrode 108 has in the center a through hole (second throughhole) 148 having a smaller diameter than that of the through hole 103. Adiameter of the through hole 147 may be, for example, about 80 μm. Thethrough electrode 108 may be made of, for example, copper.

A thickness of the multilayer wiring structure having the aboveconfiguration is less than the thicknesses of the second electronicparts 95, 96 and the insulation member 98. A thickness of the multilayerwiring structure 99 may be, for example, about 20 through about 80 μm.The multilayer wiring structure 99 is configured as a film-like body ora layered body.

The adhesion layer 13 is arranged between the first semiconductorcomponent 11 and the second semiconductor component 12. The adhesionlayer 13 attaches a surface of the first semiconductor component 11, thesurface being on the side of the back surfaces 26B, 27B of the firstelectronic parts 26, 27, and a surface of the second semiconductorcomponent 12, the surface being on the side of the wirings 131, 136,145.

With the adhesion layer 13, the back surfaces 26B, 27B of the firstelectronic parts 26, 27 constituting the first semiconductor component11, the plane 19B of the insulation member 29, and the connectionsurfaces 31B, 32B, 33B of the through electrodes 31 through 33 arecovered with the adhesion layer 13.

In addition, the plane 62A of the insulation layer 62 constituting thesecond semiconductor component 12, the wirings 131, 136, 145, and theprotruding portions of the through electrodes 106 through 108 from theplane 62A of the insulation layer 62 are covered with the adhesion layer13.

The adhesion layer 13 may be made of, for example, an insulation resinhaving adhesiveness (e.g., epoxy resin). A thickness of the adhesionlayer 13 may be about 50 μm.

The through hole 15 is formed to go through a portion of the adhesionlayer 13, the portion being positioned between the through hole 146 ofthe second semiconductor component 12 and the second connection surface33B of the through electrode 33 of the first semiconductor component 11.The through hole 15 allows the second connection surface 33B of thethrough electrode 33 to be exposed, and is formed integrally with thethrough hole 146. A diameter of the through hole 15 is substantially thesame as an inner diameter of the through hole 146, and may be, forexample, about 80 μm.

The through hole 16 is formed to go through a portion of the adhesionlayer 13, the portion being positioned between the through hole 147 ofthe second semiconductor component 12 and the second connection surface31B of the through electrode 31 of the first semiconductor component 11.The through hole 16 allows the second connection surface 31B of thethrough electrode 31 to be exposed, and is formed integrally with thethrough hole 147. A diameter of the through hole 16 is substantially thesame as an inner diameter of the through hole 147, and may be, forexample, about 80 μm.

The through hole 17 is formed to go through a portion of the adhesionlayer 13, the portion being positioned between the through hole 148 ofthe second semiconductor component 12 and the second connection surface32B of the through electrode 32 of the first semiconductor component 11.The through hole 17 allows the second connection surface 32B of thethrough electrode 32 to be exposed, and is formed integrally with thethrough hole 148. A diameter of the through hole 17 is substantially thesame as an inner diameter of the through hole 148, and may be, forexample, about 80 μm.

The through electrode 21 fills the through holes 15, 146 and includes anexternal connection pad portion 151 provided in a protruding portion ofthe through electrode 106 from the plane 98B of the insulation member98. The through electrode 21 is connected to the second connectionsurface 33B of the through electrode 33 and the through electrode 106.With this, the through electrode 21 electrically connects the firstsemiconductor component 11 and the second semiconductor component 12.

The external connection pad portion 151 serves as an external connectionpad for the electronic apparatus 10. The external connection pad portion151 includes a connection surface 151A to which an external connectionterminal (not shown), for example, a solder ball is connected. Theexternal connection pad portion 151 is wider than the diameter of thethrough hole 146, which makes it possible to certainly connect theexternal connection terminal (not shown) to the connection surface 151A.

The through electrode 21 having the above configuration may be made of,for example, copper.

The through electrode 22 fills the through holes 16, 147 and includes anexternal connection pad portion 152 provided in a protruding portion ofthe through electrode 107 from the plane 98B of the insulation member98. The through electrode 22 is connected to the second connectionsurface 31B of the through electrode 31 and the through electrode 107.With this, the through electrode 22 electrically connects the firstsemiconductor component 11 and the second semiconductor component 12.

The external connection pad portion 152 serves as an external connectionpad for the electronic apparatus 10. The external connection pad portion152 includes a connection surface 152A to which an external connectionterminal (not shown), for example, a solder ball is connected. Theexternal connection pad portion 152 is wider than the diameter of thethrough hole 147, which makes it possible to certainly connect theexternal connection terminal (not shown) to the connection surface 152A.

The through electrode 22 having the above configuration may be made of,for example, copper.

The through electrode 23 fills the through holes 17, 148 and includes anexternal connection pad portion 153 provided in a protruding portion ofthe through electrode 108 from the plane 98B of the insulation member98. The through electrode 23 is connected to the second connectionsurface 32B of the through electrode 32 and the through electrode 108.With this, the through electrode 23 electrically connects the firstsemiconductor component 11 and the second semiconductor component 12.

The external connection pad portion 153 serves as an external connectionpad for the electronic apparatus 10. The external connection pad portion153 includes a connection surface 153A to which an external connectionterminal (not shown), for example, a solder ball is connected. Theexternal connection pad portion 153 is wider than the diameter of thethrough hole 148, which makes it possible to certainly connect theexternal connection terminal (not shown) to the connection surface 153A.

The through electrode 22 having the above configuration may be made of,for example, copper.

As stated above, the second semiconductor component 12 is attached onthe first semiconductor component 11 by the adhesion layer 13; thethrough holes 15 through 17 are formed to go through portions of theadhesion layer 13, the portions being positioned between the throughholes 146 through 148 of the second semiconductor component 12 and thecorresponding second connection surfaces 31B, 32B, 33B of thecorresponding through electrodes 31, 32, 33 of the first semiconductorcomponent 11; and the through holes 15 through 17 and 146 through 148are filled with the corresponding through electrodes 21 through 23.Therefore, it is possible to electrically connect the firstsemiconductor component 11 and the second semiconductor component 12,without using an inner connection terminal (not shown), for example, asolder ball, thereby reducing a thickness of the electronic apparatus10.

In addition, because the first semiconductor component 11 and the secondsemiconductor component 12 are electrically connected with each othervia the through electrodes 21 through 23, reliability of electricalconnection between the first semiconductor component 11 and the secondsemiconductor component 12 can be improved when being compared with acase where the first semiconductor component 11 and the secondsemiconductor component 12 are connected with each other via theinternal connection terminal, for example, a solder ball.

The solder resist layer 24 is provided on the back surfaces 95B, 96B ofthe corresponding second electronic parts 95, 96 and the plane 98B ofthe insulation member 98. The solder resist layer 24 includes openings155 through 157. The opening 155 is formed so that the connectionsurface 151A of the external connection pad portion 151 provided in thethrough electrode 21 is exposed. The opening 156 is formed so that theconnection surface 152A of the external connection pad portion 152provided in the through electrode 22 is exposed. The opening 157 isformed so that the connection surface 153A of the external connectionpad portion 153 provided in the through electrode 23 is exposed.

According to the electronic apparatus 10 of an embodiment of the presentinvention, the second semiconductor component 12 is attached on thefirst semiconductor component 11 by the adhesion layer 13; the throughholes 15 through 17 are formed to go through portions of the adhesionlayer 13, the portions being positioned between the through holes 146through 148 of the second semiconductor component 12 and thecorresponding second connection surfaces 31B, 32B, 33B of thecorresponding through electrodes 31, 32, 33 of the first semiconductorcomponent 11; and the through holes 15 through 17 and 146 through 148are filled with the corresponding through electrodes 21 through 23 thatconnect the second surfaces 31B, 32B, 33B and the corresponding throughelectrodes 106 through 108. Therefore, it is possible to electricallyconnect the first semiconductor component 11 and the secondsemiconductor component 12, without using an inner connection terminal(not shown), for example, a solder ball, thereby reducing a thickness ofthe electronic apparatus 10.

In addition, because the first semiconductor component 11 and the secondsemiconductor component 12 are electrically connected via the throughelectrodes 21 through 23, reliability of electrical connection betweenthe first semiconductor component 11 and the second semiconductorcomponent 12 can be improved when being compared with a case where thefirst semiconductor component 11 and the second semiconductor component12 are connected with each other via the internal connection terminal,for example, a solder ball.

FIGS. 3 through 23 illustrate steps of a fabrication method of theelectronic apparatus according to the first embodiment of the presentinvention. In these drawings, the same or corresponding referencesymbols are given to the same or corresponding components or parts asthose of the electronic apparatus 10 according to the first embodiment.

Referring to FIGS. 3 through 23, the fabrication method of theelectronic apparatus 10 of the first embodiment is explained. First,after an adhesive 162 is applied onto an upper surface 161A of asupporting body 161, the first electronic parts 26, 27 are attached onthe upper surface 161A by the adhesive 162 in a step illustrated in FIG.3.

At this time, the first electronic parts 26, 27 are attached on theupper surface 161A of the supporting body 161 so that the connectionsurfaces 37A, 38A, 39A, 40A of the corresponding electrode pads 37, 38,39, 40 come into contact with the upper surface 161A of the supportingbody 161. Preferably, the first electronic parts 26, 27 are partlyburied into the adhesive 162 by pressing the first electronic parts 26,27 toward the upper surface 161A, in order to force the connectionsurfaces 37A, 38A, 39A, 40A of the corresponding electrode pads 37, 38,39, 40 into contact with the upper surface 161A of the supporting body161.

The first electronic parts 26, 27 are not thinned at this stage. Becausethe first electronic parts 26, 27 are handled more easily before beingthinned than after being thinned, the first electronic parts 26, 27 canbe fixed in predetermined positions with higher accuracy. Thicknesses ofthe first electronic parts 26, 27 before being thinned may be, forexample, about 700 μm.

Semiconductor chips may be used as the first electronic parts 26, 27.Specifically, both of the first electronic parts 26, 27 may besemiconductor chips such as Central Processing Units (CPUs); one of thefirst electronic parts 26, 27 may be a semiconductor chip such as a CPU,while the other one of the first electronic parts 26, 27 may be asemiconductor chip such as a memory; or one of the first electronicparts 26, 27 may be a semiconductor chip such as a CPU, while the otherone of the first electronic parts 26, 27 may be a semiconductor chipsuch as a Graphics Processing Unit (GPU).

The supporting body 161 may be, for example, a glass substrate, asilicon substrate, a metal plate (e.g., a copper plate), or the like. Athickness of the supporting body 161 may be, for example, about 300through about 600 μm. The adhesive 162 may be, for example, an adhesivepolyimide resin tape having a thickness of about 1 through about 20 μm.

Next, the insulation member 29 that seals a part of a side surface ofthe first electronic parts 26, 27 is formed on an upper surface 162A ofthe adhesive 162 in a step illustrated in FIG. 4.

The insulation member 29 may be, for example, a mold resin (e.g., anepoxy-based mold resin). The insulation member 29 may be formed by, forexample, a transfer mold method. A thickness of the insulation member 29may be, for example, about 300 μm at this stage.

Next, the first electronic parts 26, 27 and the insulation member 29 areground, for example, using a back side grinder from the upper surface ofthe structure illustrated in FIG. 4 (the back surfaces 26B, 27B of thefirst electronic parts 26, 27), in a step illustrated in FIG. 5. As aresult, the first electronic parts 26, 27 are thinned, and the backsurfaces 26B, 27B of the first electronic parts 26, 27 that have beenthinned and the plane 29B of the insulation member 29 form the sameplane, which makes flat an upper surface of the structure illustrated inFIG. 5.

Thicknesses of the first electronic parts 26, 27 that have been thinnedmay be, for example, about 200 μm. Note that these thicknesses do notcorrespond to a height of the back surfaces 26B, 27B measured from theupper surface 161A of the supporting body 161. Incidentally, a thicknessof the insulation member 29 may also be, for example, about 200 μm afterhaving been thinned.

Next, the through holes 43 through 45 that go through the insulationlayer 162 and the adhesive 162 are formed from the plane 29B of theinsulation member 29, in a step illustrated in FIG. 6.

The through holes 43 through 45 may be formed by irradiating a laserbeam onto portions of the insulation member 29 where the through holes43 through 45 are to be formed and the adhesive 162. The through holes43 through 45 are formed so that the upper surface 161A of thesupporting body 161 is exposed. Diameters of the through holes 43through 45 may be, for example, about 200 μm.

Next, the through hole 43 is filled with the through electrode 31 havingthe first and the second connection surfaces 31A, 31B; the through hole44 is filled with the through electrode 32 having the first and thesecond connection surfaces 32A, 32B; and the through hole 45 is filledwith the through electrode 33 having the first and the second connectionsurfaces 33A, 33B, in a step illustrated in FIG. 7.

At this time, the through electrodes 31 through 33 are formed so thatthe second connection surfaces 31B, 32B, 33B of the through electrodes31 through 33, the back surfaces 26B, 27B of the first electronic parts26, 27, and the plane 29B of the insulation member 29 form the sameplane. The through electrodes 31 through 33 may be formed by, forexample, an electroplating method, a printing method, or the like.

When the electroplating method is used to form the through electrodes 31through 33, a copper layer is formed on the upper surface 161A of thesupporting body (e.g., a silicon substrate, a glass substrate, or thelike) 161 by a supporting method in advance, and then the stepsillustrated in FIGS. 3 through 6 are carried out. Next, theelectroplating method is executed by feeding electricity to the copperlayer serving as a power feeding layer, thereby to fill the throughholes 43 through 45 with, for example, copper.

Incidentally, when the support body 161 is made of a metal (e.g.,copper) plate, the need for the copper layer is eliminated because themetal plate can serve as the power feeding layer.

In addition, after the through electrodes 31 through 33 are formed, aprotection layer may be provided on the second connection surfaces 31B,32B, 33B of the corresponding through electrodes 31 through 33. Theprotection layer may be formed of, for example, a nickel (Ni)/gold (Au)stacked layer, specifically a nickel (Ni) layer electroplated on thesecond connection surfaces 31B, 32B, 33B and an Au layer electroplatedon the Ni layer.

Next, the supporting body 161 and the adhesive 162 are removed from theinsulation member 29 having the first electronic parts 26, 27 and thethrough electrodes 31 through 33, in a step illustrated in FIG. 8.

Specifically, the supporting body 161 is mechanically removed along withthe adhesive 162 from the insulation member 29 having the firstelectronic parts 26, 27 and the through electrodes 31 through 33.

With this, the through electrodes 31 through 33 and the first electrodepads 37 through 40 are protruded from the multilayer wiring structureforming surface 29A of the insulation member 29 by a thickness of theadhesive 162. Such protrusions cause substantially no problems infabricating the electronic apparatus.

In addition, the first connection surfaces 31A, 32A, 33A of thecorresponding through electrodes 31, 32, 33, the connection surfaces37A, 38A, 39A, 40A of the corresponding first electrode pads 37, 38, 39,40, and the multilayer wiring structure forming surface 29A do not formthe same plane.

Next, the insulation layer 61 having the openings 163 through 169 isformed on the multilayer wiring structure forming surface 29A, the firstelectrode pads 37 through 40, the first electrode pad forming surfaces26A, 27A, and the first connection surfaces 31A, 32A, 33A of thecorresponding through electrodes 31, 32, 33.

Specifically, the insulation layer 61 is formed by attaching aninsulation resin film (e.g., an epoxy resin film) serving as a mothermaterial of the insulation layer 61 on a lower surface of a structureillustrated in FIG. 8, and laser-machining portions of the insulationresin film where the openings 163 through 169 are provided.

The openings 163 through 166 are formed so that the correspondingconnection surfaces 37A through 40A are exposed. The opening 164 isformed so that the connection surface 38A is exposed. The openings 167,168, 169 are formed so that the connection surfaces 31A, 32A, 33A of thethrough electrodes 31, 32, 33, respectively are exposed.

Next, the vias 65, 66, 71, 72, 76, 77, 81 are formed in thecorresponding openings 163, 165, 164, 167, 166, 168, 169, respectivelyand simultaneously the wirings 67, 73, 78, 82 are formed on the plane61A of the insulation layer 61. With this, the first electrode pads 37,38 of the first electronic part 26 are directly connected with thecorresponding vias 65, 71, and the first pads 39, 40 of the firstelectronic part 27 are directly connected with the corresponding vias66, 76.

As stated, because the first electrode pads 37 through 40 of the firstelectronic parts 26, 27 are directly connected with the correspondingvias 65, 66, 71, 76, a thickness of the first semiconductor component 11can be reduced when being compared with the related art semiconductorapparatus where the electronic part and the patterned wiring areelectrically connected with each other via a bump or a metal wiring.

The via 72 is directly connected to the first connection surface 31A ofthe through electrode 31, and the via 77 is directly connected to thefirst connection surface 32A of the through electrode 32. In addition,the via 81 is directly connected to the first connection surface 33A ofthe through electrode 33.

The vias 65, 66, 71, 72, 76, 77, 81 and the wirings 67, 73, 78, 82 maybe formed by, for example, a semi-additive method, and formed of, forexample, copper.

Next, substantially the same process as explained with reference to FIG.9 is carried out in a step illustrated in FIG. 11. Asa result, theinsulation layer 62 having the openings 171 through 174 is formed on theplane 61A of the insulation layer 61. With this, the stacked body 49composed of the insulation layers 61, 62 are stacked one on the other.

The opening 171 is formed so that a part of the wiring 67 is exposed.The opening 172 is formed so that a part of the wiring 73 is exposed.The opening 173 is formed so that a part of the wiring 78 is exposed.The opening 174 is formed so that a part of the wiring 82 is exposed.The insulation layer 62 may be formed by using an epoxy resin film.

Next, substantially the same process as explained with reference to FIG.10 is carried out in a step illustrated in FIG. 12. As a result, thevias 68, 74, 79, 83 are formed in the corresponding openings 171, 172,173, 174, and simultaneously the external connection pads 51, 52, 53, 54having the corresponding connection surfaces 51A, 52A, 53A, 54A areformed on the plane 62A of the insulation layer 62.

With this, the patterned wiring 56 that electrically connects the firstelectronic parts 26, 27 and the external connection pad 51, thepatterned wiring 57 that electrically connects the external connectionpad 52 with the first electronic part 26 and the through electrode 31,the patterned wiring 58 that electrically connects the externalconnection pad 53 with the first electronic part 27 and the throughelectrode 32, and the patterned wiring 59 that electrically connects theexternal connection pad 54 and the through electrode 33 are formed.

The vias 68, 74, 79, 83 and the external connection pads 51, 52, 53, 54may be made of, for example, copper.

Next, the solder resist layer 60 having the openings 86 through 89 areformed on the plane 62A of the insulation layer 62, in a stepillustrated in FIG. 13. With this, the first semiconductor component 11is completed. Incidentally, the steps illustrated in FIGS. 3 through 13correspond to a “first semiconductor component forming step”.

The opening 86 is formed so that the connection surface 51A is exposed.The opening 87 is formed so that the connection surface 52A is exposed.The opening 88 is formed so that the connection surface 53A is exposed.The opening 89 is formed so that the connection surface 54A is exposed.

Incidentally, a protection layer composed of a Ni/Au stacked layerformed by stacking a Ni electroplating layer and an Au electroplatinglayer in this order may be provided.

One external connection terminal may be formed on each of the connectionsurfaces 51A through 54A. The external connection terminal may be, forexample, a solder ball, a pin terminal, or the like.

Next, substantially the same processes as explained with reference toFIGS. 3 through 5 are carried out, in a step illustrated in FIG. 14. Asa result, the thinned second electronic parts 95, 96, and the plane 98that forms the same plane along with the back surfaces 95B, 96B of thesecond electronic parts 95, 96 are formed on the adhesive 162 formed onthe supporting body 161.

Semiconductor chips may be used as the second electronic parts 95, 96.Specifically, both of the second electronic parts 95, 96 may besemiconductor chips such as Central Processing Units (CPUs); one of thesecond electronic parts 95, 96 may be a semiconductor chip such as aCPU, while the other one of the second electronic parts 95, 96 may be asemiconductor chip such as a memory; or one of the second electronicparts 95, 96 may be a semiconductor chip such as a CPU, while the otherone of the second electronic parts 95, 96 may be a semiconductor chipsuch as a Graphics Processing Unit (GPU).

Thicknesses of the second electronic parts 95, 96 that have been thinnedmay be, for example, about 200 μm. A thickness of the insulation member98 may be, for example, about 200 μm. The insulation layer 98 may be,for example, an epoxy resin.

Next, substantially the same process as explained with reference to FIG.8 is carried out in a step illustrated in FIG. 15. As a result, thesupporting body 161 and the adhesive 162 are removed from the insulationmember 98 having the second electronic parts 95, 96 illustrated in FIG.14.

Next, substantially the same process as explained with reference to FIG.9 is carried out in a step illustrated in FIG. 16. As a result, theinsulation layer 61 is formed that covers the multilayer wiringstructure forming surface 98A, the second electrode pad forming surfaces95A, 96A, and the second electrode pads 114 through 117. In addition,substantially the same process as explained with reference to FIG. 10 iscarried out, so that the vias 127, 128, 133, 141 and the wirings 129,134, 142 are simultaneously formed.

The vias 127, 128, 133, 141 are formed to be directly connected to theconnection surfaces 114A, 116A, 115A, 117A of the second electrode pads114, 116, 115, 117, respectively.

The wiring 129 is formed integrally with the vias 127, 128. The wiring134 is formed integrally with the via 133. The wiring 142 is formedintegrally with the via 141.

The vias 127, 128, 133, 141 and the wirings 129, 134, 142 may be madeof, for example, copper.

Next, substantially the same process as explained with reference to FIG.11 is carried out in a step illustrated in FIG. 17. As a result, theinsulation layer 62 is formed on the plane 61A of the insulation layer61 and the wirings 129, 134, 142. With this, the stacked body 121composed of the insulation layers 61, 62 is formed.

Next, substantially the same process as explained with reference to FIG.12 is carried out to simultaneously form the vias 135, 143 and thewirings 131, 136, 145. With this, the wiring patterns 123 through 125are formed on the stacked body 121, and thus the multilayer wiringstructure 99 is formed.

The vias 135, 143, 131 are formed to be connected to the wirings 134,142, 129, respectively. The wirings 136, 145 are formed integrally withthe vias 135, 143, respectively.

The vias 135, 143 and the wirings 131, 136, 145 may be made of, forexample, copper.

Next, the through holes (first through holes) 101 through 103 that gothrough the structure illustrated in FIG. 17 are formed in a stepillustrated in FIG. 18. The through hole 101 is formed to go through theinsulation member 98, the stacked body 121, and the wiring 131. Thethrough hole 102 is formed to go through the insulation member 98, thestacked body 121, and the wiring 136. The through hole 103 is formed togo through the insulation member 98, the stacked body 121, and thewiring 145.

Specifically, the through holes 101 through 103 are formed by, forexample, laser machining or drilling. Diameters of the through holes 101through 103 may be, for example, about 100 μm.

Next, the through electrodes (second through electrodes) 106 through 108are formed in a step illustrated in FIG. 19. The through electrode 106is formed on an inner surface of the through hole 101 (including a sidesurface of the wiring 131), a part of the plane 98B of the insulationmember 98, and a lower surface of the wiring 131.

The through electrode 107 is formed on an inner surface of through hole102 (including a side surface of the wiring 136), apart of the plane 98Bof the insulation member 98, and a lower surface of the wiring 136. Thethrough electrode 108 is formed on an inner surface of the through hole103 (including a side surface of the wiring 145), a part of the plane98B of the insulation member 98, and a lower surface of the wiring 145.

Specifically, the through electrodes 106 through 108 may be formed byexecuting a nonelectrolytic plating method to form a nonelectrolyticcopper film and then an electrolytic plating method to form anelectrolytic copper film on the nonelectrolytic copper film. In thiscase, the through electrodes 106 through 108 are composed of thenonelectrolytic copper film and the electrolytic copper film.

With this, the second semiconductor component 12 is completed.Incidentally, the steps illustrated in FIGS. 14 through 19 correspond toa “second semiconductor component forming step”.

Next, the second semiconductor component 12 illustrated in FIG. 19 isattached on the first semiconductor component 11 illustrated in FIG. 13via the adhesion layer 13 (semiconductor component attaching step).Specifically, the first semiconductor component 11 and the secondsemiconductor component 12 are bonded with each other by applying theadhesion layer 13 between the semiconductor component 11 and the secondsemiconductor component 12 so that the back surfaces 26B, 27B of thecorresponding first electronic parts 26, 27 oppose the multilayer wiringstructure 99.

The adhesion layer 13 may be made of, for example, an insulation resinhaving adhesiveness (e.g., an epoxy resin). A thickness of the adhesionlayer 13 may be, for example, about 50 μm.

Next, in a step illustrated in FIG. 21, the through holes (third throughholes) 15 through 17 are formed that go through portions of the adhesionlayer 13, the portions being positioned between the through holes 146through 148 and the second connection surfaces 31B, 32B, 33B of thethrough electrodes 31 through 33, and are formed integrally with thecorresponding through holes 146 through 148. With this, the secondconnection surfaces 31B, 32B, 33B of the through electrodes 31, through33 are exposed through the through holes 15 through 17, respectively.

The through hole 15 is formed to go through a portion of the adhesionlayer 13, the portion being positioned between the through hole 146 andthe second connection surface 33B of the through electrode 33. Thethrough hole 16 is formed to go through a portion of the adhesion layer13, the portion being positioned between the through hole 147 and theconnection surface 31B of the through electrode 31. The through hole 17is formed to go through a portion of the adhesion layer 13, the portionbeing positioned between the through hole 148 and the connection surface32B of the through electrode 32.

Specifically, the through holes 15 through 17 are formed bylaser-machining the portions of the adhesion layer 13 between thethrough holes 146 through 148 and the connection surfaces 31B, 32B, 33B,respectively. Diameters of the through holes 15 through 17 may be, forexample, about 80 μm.

Next, in a step illustrated in FIG. 22, the through holes 15, 146 arefilled to form the through electrode 21 including the externalconnection pad portion 151 provided in a protruding portion of thethrough electrode 106 from the plane 98B of the insulation member 98;the through holes 16, 147 are filled to form the through electrode 22including the external connection pad portion 152 provided in aprotruding portion of the through electrode 107 from the plane 98B ofthe insulation member 98; and the through holes 17, 148 are filled toform the through electrode 23 including the external connection padportion 153 provided in a protruding portion of the through electrode108 from the plane 98B of the insulation member 98. The throughelectrodes 21, 22, 23 are simultaneously formed in this step (thirdthrough electrode forming step).

With this, the through electrode 21 is connected to the throughelectrode 33, 106; the through electrode 22 is connected to the throughelectrode 31, 107; and the through electrode 23 is connected to thethrough electrode 32, 108. Namely, the through electrodes 21 through 23electrically connect the first semiconductor component 11 and the secondsemiconductor component 12.

In the above manner, the first semiconductor component 11 and the secondsemiconductor component 12 are attached with each other via the adhesionlayer 13; the through holes 15 through 17 are formed to go throughportions of the adhesion layer 13, the portions being positioned betweenthe through holes 146 through 148 and the corresponding secondconnection surfaces 31B, 32B, 33B of the corresponding throughelectrodes 31, 32, 33, so that the through holes 15, 16, 17 arecontinuous with the through holes 146, 147, 148, respectively; and thethrough electrode 21 that fills the through holes 15, 146, the throughelectrode 22 that fills the through holes 16, 147, and the throughelectrode 23 that fills the through holes 17, 148 are simultaneouslyformed. Therefore, the first semiconductor component 11 and the secondsemiconductor component 12 are electrically connected without using aninner connection terminal (not shown), for example, a solder ball,thereby reducing a thickness of the electronic apparatus 10.

In addition, because the first semiconductor component 11 and the secondsemiconductor component 12 are electrically connected with each othervia the through electrodes 21 through 23, reliability of electricalconnection between the first semiconductor component 11 and the secondsemiconductor component 12 can be improved when being compared with acase where the first semiconductor component 11 and the secondsemiconductor component 12 are connected with each other via theinternal connection terminal, for example, a solder ball.

Specifically, the through electrodes 21 through 23 may be formed byexecuting a nonelectrolytic plating method to form a nonelectrolyticcopper film and then an electrolytic plating method to form anelectrolytic copper film on the nonelectrolytic copper film. In thiscase, the through electrodes 21 through 23 are composed of thenonelectrolytic copper film and the electrolytic copper film.

Next, in a step illustrated in FIG. 23, the solder resist layer 24having the openings 155 through 157 is formed to cover the back surfaces95B, 96B of the corresponding second electronic parts 95, 96 and theplane 98B of the insulation member 98. With this, the electronicapparatus 10 according to the first embodiment of the present inventionis fabricated.

The openings 155, 156, 157 are formed to expose the connection surfaces151A, 152A, 153A of the external connection pads 151, 152, 153,respectively.

According to the fabrication method of the embodiment of the presentinvention, the first semiconductor component 11 and the secondsemiconductor component 12 are attached with each other via the adhesionlayer 13; the through holes 15 through 17 are formed to go throughportions of the adhesion layer 13, the portions being positioned betweenthe through holes 146 through 148 and the corresponding secondconnection surfaces 31B, 32B, 33B of the corresponding throughelectrodes 31, 32, 33, so that the through holes 15, 16, 17 arecontinuous with the through holes 146, 147, 148, respectively; and thethrough electrode 21 that fills the through holes 15, 146, the throughelectrode 22 that fills the through holes 16, 147, and the throughelectrode 23 that fills the through holes 17, 148 are simultaneouslyformed. Therefore, the first semiconductor component 11 and the secondsemiconductor component 12 are electrically connected without using aninner connection terminal (not shown), for example, a solder ball,thereby reducing a thickness of the electronic apparatus 10.

In addition, because the first semiconductor component 11 and the secondsemiconductor component 12 are electrically connected with each othervia the through electrodes 21 through 23, reliability of electricalconnection between the first semiconductor component 11 and the secondsemiconductor component 12 can be improved when being compared with acase where the first semiconductor component 11 and the secondsemiconductor component 12 are connected with each other via theinternal connection terminal, for example, a solder ball.

(Second Embodiment)

FIG. 24 is a cross-sectional view of an electronic apparatus accordingto a second embodiment of the present invention. In this drawing, thesame or corresponding reference symbols are given to the same orcorresponding components or parts as those of the electronic apparatus10 according to the first embodiment.

Referring to FIG. 24, an electronic apparatus 180 according to thesecond embodiment includes a second semiconductor component 181, a firstsemiconductor component 182, through holes 183 through 185, throughelectrodes 187 through 189, a resin 191, and solder resist layers 192,193. First, the second semiconductor component 181 is described in thefollowing, for the sake of convenience.

The second semiconductor component 181 has substantially the sameconfigurations as the second semiconductor component 12 provided in thefirst electronic apparatus 10, but the second semiconductor component181 does not include the through holes 101 through 103, 146 through 148,and the through electrodes 106 through 108 of the first electronicapparatus 10.

The first semiconductor component 182 has substantially the sameconfigurations as the second semiconductor component 181, while thefirst semiconductor component 182 includes electronic parts that are thesame as the electronic parts 26, 27 of the first semiconductor component11 of the first electronic apparatus 10, in the place of the secondelectronic parts 95, 96 of the second semiconductor component 181.

Side surfaces of the first electronic parts 26, are sealed by theinsulation member 98 (first insulation member, in this case). Electrodepad forming surfaces 26A, 27A of the corresponding first electronicparts 26, 27 form the same plane along with the multilayer wiringstructure forming surface 98A (first multilayer wiring structure formingsurface). The electrode pads 37, 38 are directly connected to thepatterned wiring 123 (first patterned wiring, in this case). Theelectrode pad 38 is directly connected to the patterned wiring 124(first patterned wiring, in this case). The electrode pad 40 is directlyconnected to the patterned wiring 125 (first patterned wiring).

The second semiconductor component 181 is attached on the firstsemiconductor component 182 with the adhesion layer 13 therebetween sothat the multilayer wiring structure 99 formed in the secondsemiconductor component 181 opposes the back surfaces 26B, 27B of thefirst electronic parts 26, 27 provided in the first semiconductorcomponent 182.

The through hole 183 is formed to go through the insulation member 98,the multilayer wiring structure 99, the wiring 131, which are providedin the second semiconductor component 181; the adhesion layer 13; andthe insulation member 98, the multilayer wiring structure 99, the wiring131, which are provided in the first semiconductor component 182. Adiameter of the through hole 183 may be, for example, about 100 μm.

The through hole 184 is formed to go through the insulation member 98,the multilayer wiring structure 99, the wiring 136, which are providedin the second semiconductor component 181; the adhesion layer 13; andthe insulation member 98, the multilayer wiring structure 99, the wiring136, which are provided in the first semiconductor component 182. Adiameter of the through hole 184 may be, for example, about 100 μm.

The through hole 185 is formed to go through the insulation member 98,the multilayer wiring structure 99, the wiring 145, which are providedin the second semiconductor component 181; the adhesion layer 13; andthe insulation member 98, the multilayer wiring structure 99, the wiring145, which are provided in the first semiconductor component 182. Adiameter of the through hole 185 may be, for example, about 100 μm.

The through electrode 187 includes a through electrode body 203, a firstexternal connection pad portion 204, and a second external connectionpad portion 205. The through electrode body 203 is formed on an innersurface of the through hole 183 (including an inner surface of thewiring 131), a part of the plane 62A of the insulation layer 62, thepart being close to one end portion of the through hole 183, and a partof the plane 98B of the insulation member 98, the part being close tothe other end portion of the through hole 183. With this, the throughelectrode 187 is connected to the wiring 131 provided in the secondsemiconductor component 181 and the wiring 131 provided in the firstsemiconductor component 182. Therefore, the through electrode 187electrically connects the first semiconductor component 182 and thesecond semiconductor component 181. The through electrode body 203includes a through hole 203A in the center. The through hole 203A isfilled with the resin 191. The through electrode body 203 may be madeof, for example, copper.

The first external connection pad portion 204 is provided on a lowersurface of a part of the through electrode body 203, the part beingformed on the plane 62A of the insulation layer 62, and a lower surfaceof the resin 191, in order to close one end portion of the through hole203A. The first external connection pad portion 204 is positioned belowthe multilayer wiring structure 99 of the first semiconductor component182. The first external connection pad portion 204 includes theconnection surface 204A to which an external connection terminal (notshown) is connected. The first external connection pad portion 204serves as a pad to which other semiconductor components (not shown), amounted substrate such as a mother board (not shown), or the like areconnected. The first external connection pad portion 204 may be made of,for example, copper.

The second external connection pad portion 205 is provided on an uppersurface of a part of the through electrode body 203, the part beingformed on the plane 98B of the insulation member 98, and an uppersurface of the resin 191, in order to close the other end portion of thethrough hole 203A. The second external connection pad portion 205 ispositioned above the plane 98B of the insulation member 98 of the secondsemiconductor component 181. The second external connection pad portion205 includes the connection surface 205A to which an external connectionterminal (not shown) is connected. The second external connection padportion 205 serves as a pad to which other semiconductor components (notshown), a mounted substrate such as a mother board (not shown), or thelike are connected. The second external connection pad portion 205 maybe made of, for example, copper.

The through electrode 188 includes a through electrode body 207, a firstexternal connection pad portion 208, and a second external connectionpad portion 209. The through electrode body 207 is formed on an innersurface of the through hole 184 (including an inner surface of thewiring 131), a part of the plane 62A of the insulation layer 62, thepart being close to one end portion of the through hole 184, and a partof the plane 98B of the insulation member 98, the part being close tothe other end portion of the through hole 184. With this, the throughelectrode 188 is connected to the wiring 136 provided in the secondsemiconductor component 181 and the wiring 136 provided in the firstsemiconductor component 182. Therefore, the through electrode 188electrically connects the first semiconductor component 182 and thesecond semiconductor component 181. The through electrode body 207includes a through hole 207A in the center. The through hole 207A isfilled with the resin 191. The through electrode body 207 may be madeof, for example, copper.

The first external connection pad portion 208 is provided on a lowersurface of a part of the through electrode body 207, the part beingformed on the plane 62A of the insulation layer 62, and a lower surfaceof the resin 191, in order to close one end portion of the through hole207A. The first external connection pad portion 208 is positioned belowthe multilayer wiring structure 99 of the first semiconductor component182. The first external connection pad portion 208 includes theconnection surface 208A to which an external connection terminal (notshown) is connected. The first external connection pad portion 208serves as a pad to which other semiconductor components (not shown), amounted substrate such as a mother board (not shown), or the like areconnected. The first external connection pad portion 208 may be made of,for example, copper.

The second external connection pad portion 209 is provided on an uppersurface of a part of the through electrode body 207, the part beingformed on the plane 98B of the insulation member 98, and an uppersurface of the resin 191, in order to close the other end portion of thethrough hole 207A. The second external connection pad portion 209 ispositioned above the plane 98B of the insulation member 98 of the secondsemiconductor component 181. The second external connection pad portion209 includes the connection surface 209A to which an external connectionterminal (not shown) is connected. The second external connection padportion 209 serves as a pad to which other semiconductor components (notshown), a mounted substrate such as a mother board (not shown), or thelike are connected. The second external connection pad portion 209 maybe made of, for example, copper.

The through electrode 189 includes a through electrode body 211, a firstexternal connection pad portion 212, and a second external connectionpad portion 213. The through electrode body 211 is formed on an innersurface of the through hole 185 (including an inner surface of thewiring 145), a part of the plane 62A of the insulation layer 62, thepart being close to one end portion of the through hole 185, and a partof the plane 98B of the insulation member 98, the part being close tothe other end portion of the through hole 185. With this, the throughelectrode 189 is connected to the wiring 145 provided in the secondsemiconductor component 181 and the wiring 145 provided in the firstsemiconductor component 182. Therefore, the through electrode 189electrically connects the first semiconductor component 182 and thesecond semiconductor component 181. The through electrode body 211includes a through hole 211A in the center. The through hole 211A isfilled with the resin 191. The through electrode body 211 may be madeof, for example, copper.

The first external connection pad portion 212 is provided on a lowersurface of a part of the through electrode body 211, the part beingformed on the plane 62A of the insulation layer 62, and a lower surfaceof the resin 191, in order to close one end portion of the through hole211A. The first external connection pad portion 212 is positioned belowthe multilayer wiring structure 99 of the first semiconductor component182. The first external connection pad portion 212 includes theconnection surface 212A to which an external connection terminal (notshown) is connected. The first external connection pad portion 212serves as a pad to which other semiconductor components (not shown), amounted substrate such as a mother board (not shown), or the like areconnected. The first external connection pad portion 212 may be made of,for example, copper.

The second external connection pad portion 213 is provided on an uppersurface of a part of the through electrode body 211, the part beingformed on the plane 98B of the insulation member 98, and an uppersurface of the resin 191, in order to close the other end portion of thethrough hole 211A. The second external connection pad portion 213 ispositioned above the plane 98B of the insulation member 98 of the secondsemiconductor component 181. The second external connection pad portion213 includes the connection surface 213A to which an external connectionterminal (not shown) is connected. The second external connection padportion 213 serves as a pad to which other semiconductor components (notshown), a mounted substrate such as a mother board (not shown), or thelike are connected. The second external connection pad portion 213 maybe made of, for example, copper.

As explained above, the second semiconductor component 181 is attachedon the first semiconductor component 182 via the adhesion layer 13; andthe through electrodes 187 through 189 that are connected to thecorresponding patterned wirings 123 through 125 formed in the firstsemiconductor component 182 and the second semiconductor component 181.Therefore, the first semiconductor component 182 and the secondsemiconductor component 181 can be electrically connected to each otherwithout using an internal connection terminal (e.g., a solder ball),thereby reducing a thickness of the electronic apparatus 108.

In addition, because the first semiconductor component 182 and thesecond semiconductor component 181 are electrically connected with eachother via the through electrodes 187 through 189, reliability ofelectrical connection between the first semiconductor component 182 andthe second semiconductor component 181 can be improved when beingcompared with a case where the first semiconductor component 182 and thesecond semiconductor component 181 are connected with each other via theinternal connection terminal, for example, a solder ball.

The first external connection pad portions 204, 208, 212 and the secondexternal connection pad portions 205, 209, 213 may be wider thandiameters of the through holes 183, 184, 185, respectively. With this,other semiconductor components (not shown), amounted substrate such as amother board (not shown), or the like are certainly connected to thefirst external connection pad portions 204, 208, 212 and the secondexternal connection pad portions 205, 209, 213 via the externalconnection terminals (not shown).

The resin 191 fills the through holes 203A, 207A, 211A. The resin 191may be made of, for example, an epoxy resin.

The solder resist layer 192 is formed on the plane 62A of the insulationlayer 62 and the wirings 136, 145. The solder resist layer 192 includesthe openings 216 through 218. The opening 216 is formed so that theconnection surface 204A of the first connection pad portion 204 isexposed. The opening 217 is formed so that the connection surface 208Aof the first external connection pad portion 208 is exposed. The opening218 is formed so that the connection surface 212A of the first externalconnection pad portion 212 is exposed.

The solder resist layer 193 is formed on the plane 98B of the insulationmember 98 and the back surfaces 95B, 96B of the second electronic parts95, 96. The solder resist layer 193 includes the openings 221 through223. The opening 221 is formed so that the connection surface 205A ofthe second connection pad portion 205 is exposed. The opening 222 isformed so that the connection surface 209A of the second externalconnection pad portion 209 is exposed. The opening 223 is formed so thatthe connection surface 213A of the second external connection padportion 213 is exposed.

According to the electronic apparatus of this embodiment, the secondsemiconductor component 181 is attached on the first semiconductorcomponent 182 via the adhesion layer 13; and the through electrodes 187through 189 that go through the first semiconductor component 182 andthe second semiconductor component 181 are formed to be connected to thecorresponding patterned wirings 123 through 125 formed in the firstsemiconductor component 182 and the second semiconductor component 181.Therefore, the first semiconductor component 182 and the secondsemiconductor component 181 are electrically connected to each otherwithout using an internal connection terminal (e.g., a solder ball),thereby reducing a thickness of the electronic apparatus 198.

In addition, because the first semiconductor component 182 and thesecond semiconductor component 181 are electrically connected with eachother via the through electrodes 187 through 189, reliability ofelectrical connection between the first semiconductor component 182 andthe second semiconductor component 181 can be improved when beingcompared with a case where the first semiconductor component 182 and thesecond semiconductor component 181 are connected with each other via theinternal connection terminal, for example, a solder ball.

FIGS. 25 through 28 are explanatory views illustrating fabrication stepsof fabricating the electronic apparatus according to the secondembodiment of the present invention. In the drawings, the same orcorresponding reference symbols are given to the same or correspondingcomponents or parts as those of the electronic apparatus 10 according tothe first embodiment.

Referring to FIGS. 25 through 28, a fabrication method of the electronicapparatus 180 according to the second embodiment of the presentinvention is explained. First, substantially the same steps explainedwith reference to FIGS. 14 through 17 are carried out twice, therebyfabricating the first semiconductor component 182 and the secondsemiconductor component 181 (first semiconductor component forming stepand second semiconductor component forming step).

Next, in a step illustrated in FIG. 25, the second semiconductorcomponent 181 is attached on the first semiconductor component 182 viathe adhesion layer 13 (semiconductor component attaching step).Specifically, the first semiconductor component 182 and the secondsemiconductor component 181 are attached by applying an adhesive betweenthe first semiconductor component 182 and the second semiconductorcomponent 181 so that the first back surfaces 26B, 27B of thecorresponding first electronic parts 26, 27 oppose the multilayer wiringstructure 99 of the second semiconductor component 181.

The adhesion layer 13 may be made of, for example, an insulation resinhaving adhesiveness (e.g., epoxy resin). A thickness of the adhesionlayer 13 may be about 50 μm.

Next, the through holes 183 through 185 are formed in a step (throughhole forming step) illustrated in FIG. 26.

The through hole 183 is formed to go through the insulation member 98,the multilayer wiring structure 99, the wiring 131, which are providedin the second semiconductor component 181; the adhesion layer 13; andthe insulation member 98, the multilayer wiring structure 99, the wiring131, which are provided in the first semiconductor component 182.

The through hole 184 is formed to go through the insulation member 98,the multilayer wiring structure 99, the wiring 136, which are providedin the second semiconductor component 181; the adhesion layer 13; andthe insulation member 98, the multilayer wiring structure 99, the wiring136, which are provided in the first semiconductor component 182.

The through hole 185 is formed to go through the insulation member 98,the multilayer wiring structure 99, the wiring 145, which are providedin the second semiconductor component 181; the adhesion layer 13; andthe insulation member 98, the multilayer wiring structure 99, the wiring145, which are provided in the first semiconductor component 182. Adiameter of the through hole 185 may be, for example, about 100 μm.

The through holes 183 through 185 are formed by, for example, lasermachining.

Next, the through electrodes 187 through 189 are formed in thecorresponding through holes 183 through 185, and the through holes 203A,207A, 211A are filled with the resins 191 (through electrode formingstep).

With this, the through electrode 187 is connected to the wiring 131 ofthe first semiconductor component 182 and the wiring 131 of the secondsemiconductor component 181. The through electrode 188 is connected tothe wiring 136 of the first semiconductor component 182 and the wiring136 of the second semiconductor component 181. The through electrode 189is connected to the wiring 145 of the first semiconductor component 182and the wiring 145 of the second semiconductor component 181.

The through electrodes 187 through 189 are formed by a combination of anonelectrolytic plating method and an electrolytic plating method. Thethrough electrodes 187 through 189 may be made of, for example, copper.The resin 191 may be made of, for example, an epoxy resin.

Next, the solder resist layer 192 having the openings 216 through 218 isformed on the plane 62A of the insulation layer 62 of the firstsemiconductor component 182 and the wirings 136, 145, and the solderresist layer 193 having the openings 221 through 223 is formed on theplane 98B of the insulation member 98 of the second semiconductorcomponent 181 in a step illustrated in FIG. 28. With this, theelectronic apparatus 180 according to the second embodiment isfabricated.

The opening 216 is formed so that the connection surface 204A isexposed. The opening 217 is formed so that the connection surface 208Ais exposed. The opening 218 is formed so that the connection surface212A is exposed. The opening 221 is formed so that the connectionsurface 205A is exposed. The opening 222 is formed so that theconnection surface 213A is exposed.

According to the fabrication method of this embodiment, the firstsemiconductor component 182 and the second semiconductor component 181are attached by the adhesion layer 13; the through hole 183 that goesthrough the first semiconductor component 182 including the wiring 131and the second semiconductor component 181 including the wiring 131, thethrough hole 184 that goes through the first semiconductor component 182including the wiring 136 and the second semiconductor component 181including the wiring 136, and the through hole 185 that goes through thefirst semiconductor component 182 including the wiring 145 and thesecond semiconductor component 181 including the wiring 145 are formed;the through electrode 187 connected to the wiring 131, the throughelectrode 188 connected to the wiring 136, and the through electrode 189connected to the wiring 145 are formed in the corresponding throughholes 183, 184, 185. Therefore, the first semiconductor component 182and the second semiconductor component 181 are electrically connectedwith each other without using an internal connection terminal (e.g., asolder ball), thereby reducing a thickness of the electronic apparatus180.

In addition, because the first semiconductor component 182 and thesecond semiconductor component 181 are electrically connected with eachother via the through electrodes 187 through 189, reliability ofelectrical connection between the first semiconductor component 182 andthe second semiconductor component 181 can be improved when beingcompared with a case where the first semiconductor component 182 and thesecond semiconductor component 181 are connected with each other via theinternal connection terminal, for example, a solder ball.

While the present invention has been described with reference to theforegoing embodiments, the present invention is not limited to thedisclosed embodiments, but may be modified or altered within the scopeof the accompanying claims.

For example, three or more semiconductor components may be stacked.

What is claimed is:
 1. An electronic apparatus comprising: a firstsemiconductor component including a first electronic part including afirst electrode pad forming surface on which a first electrode pad isformed, and a first back surface opposing the first electrode padforming surface, a first insulation member including one surface and anopposing surface, the first insulation member sealing a side surface ofthe first electronic part, and a first multilayer wiring structureincluding plural insulation layers that are stacked one above another,and a first patterned wiring, wherein the first patterned wiring isconnected to the first electrode pad; a second semiconductor componentincluding a second electronic part including a second electrode padforming surface on which a second electrode pad is formed, and a secondback surface opposing the second electrode pad forming surface, a secondinsulation member including one surface and an opposing surface, thesecond insulation member sealing a side surface of the second electronicpart, and a second multilayer wiring structure including pluralinsulation layers that are stacked one above another, and a secondpatterned wiring, wherein the second patterned wiring is connected tothe second electrode pad; an adhesion layer provided between theopposing surface of the first insulation member and the secondmultilayer wiring structure; and a through electrode configured to gothrough the first multilayer wiring structure, the first insulationmember, the adhesion layer, the second multilayer wiring structure, andthe second insulation member; wherein the first multilayer wiringstructure is formed on the one surface of the first insulation member,wherein the one surface of the first insulation member is substantiallyflush with the first electrode pad forming surface, wherein a lengthbetween the first electrode pad forming surface and the first backsurface is equivalent to a film-thickness of the first insulationmember, wherein the through electrode includes a through hole and athrough electrode body provided in the through hole, wherein the throughhole is formed to go through the first multilayer wiring structure, thefirst insulation member, the adhesion layer, the second multilayerwiring structure, the second insulation member, the first patternedwiring, and the second patterned wiring, wherein the through electrodebody includes a plating continuously formed on an inner surface of thethrough hole, and a resin filled in the through hole, wherein theplating is directly connected to the first patterned wiring and thesecond patterned wiring exposed in the inner surface of the throughhole, wherein the through electrode includes at one end a first externalconnection pad and at the other end a second external connection pad,wherein the first external connection pad is provided on a plane of thefirst multilayer wiring structure, the first external connection padprovided on the through electrode body and the resin, wherein the secondexternal connection pad is provided on a plane of the second insulationmember, the second external connection pad provided on the throughelectrode body and the resin, wherein the plane of the first multilayerwiring structure is covered by a first solder resist layer, wherein thefirst solder resist layer includes a first opening from which the firstexternal connection pad is exposed to the outside of the electronicapparatus, wherein the plane of the second insulation member is coveredby a second solder resist layer, wherein the second solder resist layerincludes a second opening from which the second external connection padis exposed to the outside of the electronic apparatus, wherein the firstopening is formed on a first end of the through hole and the secondopening is formed on a second end of the through hole, wherein the firstexternal connection pad closes the first opening and is connected to thethrough electrode body on the one end of the through electrode, whereinthe second external connection pad closes the second opening and isconnected to the through electrode body on the other end of the throughelectrode, wherein the first electronic part and the second electronicpart are electrically connected to each other by way of the directconnection between the plating and the first and second patternedwirings.
 2. The electronic apparatus of claim 1, wherein a side surfaceof the through electrode is connected to the first patterned wiring andthe second patterned wiring.
 3. The electronic apparatus as claimed inclaim 1, wherein the first electrode pad forming surface and the firstback surface of the first electronic part are exposed at the one surfaceand the opposing surface, respectively, of the first insulation member.4. The electronic apparatus as claimed in claim 1, wherein the pluralinsulation layers of the first multilayer wiring structure cover the onesurface of the first insulation member and the first electrode padforming surface.
 5. The electronic apparatus as claimed in claim 1,wherein the second electrode pad forming surface and the second backsurface of the second electronic part are exposed at the one surface andthe opposing surface, respectively, of the second insulation member. 6.The electronic apparatus as claimed in claim 1, wherein the pluralinsulation layers of the second multilayer wiring structure cover theone surface of the second insulation member and the second electrode padforming surface.
 7. The electronic apparatus as claimed in claim 1,wherein a resin is configured to fill the entire through hole.
 8. Theelectronic apparatus as claimed in claim 1, wherein the throughelectrode includes two pairs of through electrodes, wherein the firstelectronic part and the second electronic part are positioned betweenthe two pairs of through electrodes with respect to a horizontaldirection of the electronic apparatus, and wherein each of the two pairof through electrodes includes the through electrode configured to gothrough the first multilayer wiring structure, the first insulationmember, the adhesion layer, the second multilayer wiring structure, andthe second insulation member.
 9. The electronic apparatus as claimed inclaim 1, wherein the through electrode includes two pairs of throughelectrodes, wherein the two pairs of through electrodes continuouslyextending in parallel in a vertical direction of the electronicapparatus, and wherein the first electronic part and the secondelectronic part are positioned between the two pairs of throughelectrodes with respect to a horizontal direction of the electronicapparatus.
 10. The electronic apparatus as claimed in claim 1, whereinan outer edge of the first patterned wiring, an outer edge of theplating of the through body, and an outer edge of the first externalconnection pad are flush with respect to a horizontal direction of theelectronic apparatus.